Abstract
A new solution processable n-type polymer semiconductor is synthesized and characterized for use as an electron acceptor material in all-polymer bulk heterojunction solar cells. The new crystalline copolymer, poly(naphthalene diimide-alt-biselenophene) (PNDIBS), has a high field-effect electron mobility (0.07 cm2/(V s)) and broad visible-near-infrared absorption band with an optical band gap of 1.4 eV. All-polymer bulk heterojunction solar cells comprised of PNDIBS acceptor and poly(3-hexylthiophene) donor have a photovoltaic power conversion efficiency of 0.9%. The external quantum efficiency spectrum of the all-polymer solar cells shows that about 19% of the photocurrent comes from the near-infrared (700–900 nm) light harvesting by the new n-type polymer semiconductor.
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