N-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell

Abstract

The authors report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy over a range of carrier concentrations from 1016 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and staircase doping structures have been used to calibrate the doping level in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well-behaved n-type ZnSe.