Abstract
We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy (MBE) over a range of carrier concentrations from 10 16 to 10 19 cm -3. The doping levels throughout the layers have been measured by electrochemical CV profiling and calibrated in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well behaved n-type ZnSe.
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