Abstract
The electrical characteristics and interdiffusion in n-GaAs Schottky diodes containing Ti and Pt/Ti have been studied using I-V, C-V, X-ray diffraction and Rutherford backscattering measurements. Thermal aging of the diodes was carried out in vacuo at 350 and 500°C. The Ti/ n-GaAs diodes show near-ideal forward I-V characteristics with the ideality parameter n ⋍ 1·03 and the barrier height φ B ∼ 0·84 V. C-V data yield the same φ B . No interdiffusion was observed at 350°C. At 500°C, TiAs forms but the φ B remains unchanged. Pt/Ti/ n-GaAs diodes behave “Pt-like” upon aging at 500°C with φ B ∼ 0·9 V and n ∼ 1·1. The TiAs formed at 500°C is ineffective in preventing a subsequent Pt/GaAs interaction which leads to a layered arrangement of reaction products consisting of Pt 3Ga/TiAs/PtAs 2/ n-GaAs.
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