Abstract
n-channel MOS transistors operating at 77 K have been realized in Hg <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.71</inf> Cd <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.29</inf> Te with ion-implanted source and drain junctions. Enhancement-mode transistors were made with evaporated ZnS as a gate insulator, and depletion-mode transistors were made using a native oxide of mercury-cadmium-telluride. The devices exhibit surface mobility as high as 1.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . Current-voltage characteristics and capacitance-voltage data are presented and analyzed.
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