Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

Abstract

This paper presents the implementation of a novel InGaAs field-effect transistor (FET), using a ZnSe-ZnS-ZnMgS-ZnS stacked gate insulator, in a spatial wavefunction-switched (SWS) structural configuration. Unlike conventional FETs, SWS devices comprise two or more asymmetric coupled quantum wells (QWs). This feature enables carrier transfer vertically from one quantum well to another or laterally to the wells of adjacent SWS-FET devices by manipulation of the gate voltages (Vg). Observation of an extra peak (near both accumulation and inversion regions) in the capacitance–voltage data in an InGaAs-AlInAs two-quantum-well SWS structure is presented as evidence of spatial switching. The peaks are attributed to the appearance of carriers first in the lower well and subsequently their transfer to the upper well as the gate voltage is increased. The electrical characteristics of a fabricated SWS InGaAs FET are also presented along with simulations of capacitance–voltage (C–V) behavior, showing the effect of wavefunction switching between wells. Finally, logic operations involving simultaneous processing of multiple bits in a device, using coded spatial location of carriers in quantum well channels, are also described.