Abstract
Shallow diffusion of germanium into silicon, performed in a vacuum or an open-tube furnace and followed by dry oxidation, results in a C/V curve positively shifted by about 1 V for a 1000 A thick oxide layer. The shift is due to negative charges in the oxide, which make possible the manufacture of n-channel enhancement metal?oxide?semiconductor transistors with an inversion-layer mobility of 770 cm2/Vs and a threshold voltage of +0.8 V.
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