Abstract
In this paper, the effects of doping structure of multi-proton injection (MPI) buffer layer on static and short circuit characteristics of IGBT were studied, and the relationship between donor concentration of the buffer layer and injection dose and annealing temperature was studied. The MPI buffer layer suitable for 4500V IGBT was optimized by comparative experiments. This MPI buffer layer can solve the problem of high-temperature activation of the traditional IGBT buffer layer and lower thermal budget and can be fabricated on large wafers for better parameter consistency.
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