Abstract
The effect of buffer and cap layer on thermally stable perpendicular magnetic anisotropy (PMA) in buffer/CoFeB/MgO/cap structure was designed to detailed study. Not only the buffer layer is crucial, but the type of cap layer also affects the thermal stability of PMA. Relatively to the Ta samples, the W samples adopting W buffer or cap layer get a wider PMA thickness range for further increasing thermal stability of PMA in magnetic random access memory (MRAM) applications. And the same as the W buffer layer, the annealing temperature for W cap layer is also increased 30°C (from 270°C to 300°C). Via the detailed anomalous Hall effect (AHE) measurements, the thermal stability of PMA in buffer/CoFeB/MgO/cap was investigated. This work provides a promising way to obtain high thermal stability of PMA in CoFeB-MgO-based spintronic applications, and it is significant for designing the next-generation information storage devices.
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