Abstract
n-AgInSe2/p-Si heterojunction diode was fabricated by a successive layer deposition of AgInSe2 thin film on p-type Si. The ideality factor and saturation current of the diode exhibited temperature dependent behaviour. The activation energy was calculated by using traditional activation energy plot. The current mechanism for diode was determined as defect-assisted tunnelling and carrier recombination. Furthermore, a modified Horvath method which was firstly presented for n-AgInSe2/p-Si heterojunction here was used for calculation of activation energy.
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