Abstract
Carbon films deposited unintentionally on substrate holder and reactor walls significantly influenced on diamond nucleation and growth using magneto-active microwave plasma chemical vapor deposition method (MPCVD). In this study, the etching process of such carbon films for a reproducible cleaning process has been investigated. In order to clarify the effect of magneto-active microwave pure-oxygen plasma, CO2 and CO products were mainly measured as functions of treatment time, plasma pressure, microwave power and substrate bias voltage. The results obtained show that there are three time regions in the etching process which may depend on the spatial distributions of the oxygen-related radicals and the carbon films in the chamber. It is found that relatively inefficient etching proceeded in the third stage, the origin of which is discussed.
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