二次元原子薄膜の材料物性とデバイス特性を繋ぐ高輝度放射光オペランド顕微分光

Abstract

Si-based electronics has reached an ultimate fabrication level (22 nm design rule), which makes further progress hardly achieved. Therefore, 2D atomic layers including graphene have been extensively studied as next-generation device materials to supplement device functions which Si-based electronics cannot serve. Unfortunately, however, there is a gap between material electronic properties and device performances in the researches on 2D atomic layers. We demonstrate soft x-ray operando spectromicroscopies, photoemission electron microscopy (PEEM) and 3D scanning photoelectron microscopy (3D nano-ESCA), in SPring-8 to bridge the gap in graphene research. The complementary use of these operando spectromicroscopies enables us to probe both valence band and conduction bands of graphene channels under operation, resulting in revealing the effects of the interfaces with contact metal and oxide. The significance of the operando spectromicroscopy is now recognized, resulting in the adoption as a major research target in NEDO academic-industrial alliance project.