Abstract
Magnetic double tunnel junctions (DTJs) have been investigated to achieve weak bias voltage dependence and to obtain large magnetoresistance (MR) ratio at several hundred mV. IrMn/Co90Fe10/AlOx/Co90Fe10/AlOx/Co90Fe10/IrMn structures were prepared as dual-spin-valve-type DTJs, which possess the middle ferromagnetic layers consisting of both continuous and discontinuous Co90Fe10 films. For the DTJs with continuous middle Co90Fe10 layers, the bias voltage value which MR ratio reduces by half (Vh) was about 880 mV, while that of single tunnel junctions (STJs) was about 450 mV. For the DTJs with discontinuous middle Co90Fe10 layers, it was found that the resistance increased remarkably and the magnetic field response decreased in MR curves. The discontinuous Co90Fe10 layers showed superparamagnetic behavior in magnetization curves.
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