Abstract
A plasma source ion implanter (PSII) has been built and used to study nitrogen ion implantation into silicon wafers and titanium substrates. Plasma was generated by rf (13.56MHz) glow discharge. A-20kV pulse bias voltage was applied to the substrate holder for 50μs at a repetition rate of 100Hz and for 10μs at a repetition rate of 500Hz. The substrate bias voltage and current during implantation were monitored using a voltage divider and current transformer. The substrate surface was analyzed using Auger electron spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. Results showed that the PSII achieved uniform ion implantation into a three-dimensional substrate and that the Ti substrate surface was changed to TiN by nitrogen PSII treatment.
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