Nitrogen ion implantation into three-dimensional substrates by plasma source ion implantation

Abstract

The surface modification of 304 stainless steel ball and tube, silicon wafer and titanium substrates by plasma source ion implantation (PSII) has been investigated. The nitrogen plasma was generated by a radio frequency (13.56 MHz) glow discharge and an ECR microwave discharge. The substrate bias voltage and current during implantation were monitored with a high voltage probe and a current transformer. Ions are accelerated from the plasma by a high voltage pulse (typically — 20 kV, 100 Hz, 50 μs) applied directly to the substrates. The compositional and structural characterization of the surface and near surface were carried out using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and glancing angle X-ray diffraction (GXRD). The results show that uniform ion implantation into three-dimensional substrates was achieved by PSII without substrates manipulation. Furthermore ion implantation into the surface of the inside of the tube was performed. XPS and XRD measurements showed the presence of nitrides of titanium at the implanted surface for the Ti substrates.