Abstract
In order to avoid the damage of high reaction temperature to OLEDs,the low-temperature atomic layer deposition( ALD) process was introduced to deposite Al2O3 film for the encapsulation of OLEDs. However,the low temperature condition would decrease the uniformity of the film. In order to suppress the generating of vacancy,the pumping gas time( PGT) was increased during each cycle to discharge the products adequately. The micrographs,calcium test and lifetime test of OLEDs show that the film deposited at low temperature is almost the same with that deposited at high temperature,and the temperature effect to OLEDs is not negligible. The water vapor transmission rate( WVTR) of the film can reach to 8. 6 × 10- 4g /( m2·d),so the lifetime of the device with the encapsulation layer can be increased effectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
