Abstract
This paper describes the experimental research and comparison on the characterristics of FRD used Epi layer wafer and Diffused wafer.M. P. D. (Merged Pin Diode) construction which is composed of PiN diode and Schottky barrier diod is used in order to obtain fast and soft reverse recovery characteristics of 200V/300V/400V/600V rated reverse voltage.
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Schedule a callMore From: Journal of the Japan Institute of Power Electronics
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