Abstract
Nanoparticles formed in a thin SiO2 layer on silicon substrate are expected to use for development of single electron devices. The TEM observation is reliable but takes much effort and a long time for obtaining information about state of nanoparticles, i.e. particle size, distribution depth. New method is desired to obtain the information with ease and a short time like optical transmission analysis. Here, optical reflection property from multiple layer structure on Si was studied. We proposed a calculation method of the reflectance from Ag implanted 50-nm-thick SiO2 film on Si substrate with three-layers model of the top SiO2, a composite layer with Ag nanoparticles, and bottom SiO2 layer. The experimentally obtained reflectance spectra from samples at 30 keV-1 × 1016 ions/cm2 are well fitted by the proposed analysis as changing particle size and distribution depth based on the depth profiles of implanted atoms.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
