Abstract
Field-ion microscopy of semiconductores is now becoming a popular research project in many laboratories. However, it is still not easy to get good field-ion images (FI images) of semiconductores and to interprete the obserbed images. We present here some computer simulations of the field-ion images of Si obtained by using a low-cost microcomputer. Using the conventional thin shell method for image formation, FI images of Si tips oriented along [111], [110] and [100] directions were simulated and compared with the experimental FI images. A good agreement was obtained in the case of the [111] oriented tip surface, while in other cases a detailed comparison was found to be difficult because of the lack of sufficient resolution in the observed FI images. This work can be extended and applied to the study of metal-semiconductor interfaces.
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