Growth of thin single crystal NiSi2 films on Si surfaces, a field ion microscope study

Abstract

Thin single crystal NiSi2 films have been grown epitaxially on the [111] oriented Si tip surface in ultrahigh vacuum (UHV). A 180° change in the axial symmetry is found for the field ion images taken before and after the growth of the silicide layers. From this observation and a computer simulation of the field ion images we conclude that the Si-NiSi2 interface has the B-type structure. The field ion image of the NiSi2 films is good enough to reveal the atomic structure of the (111) Ni layer.