Abstract
The photothermal deflection of a microcantilever is much increased with a bimorph and an antireflection structure. The deflection is more than half wavelength by the temperature rise of 100°C which is expected by an optical absorption of over 98% for the antireflection coating of Au/Si3N4/Au fabricated on the bimorph structure. The designed cantilever monolithically integrated on gallium arsenide (GaAs, λ=0.83 μm) or indium phosphide (InP, λ=1.3μm) will be used for the external-cavity length change of a tunable laser diode.
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