Abstract
Electron emission characteristics of niobium nitride field emitter arrays were investigated as a function of nitrogen composition of niobium nitride. Field emitter arrays with 1024 tips were fabricated by depositing niobium nitride onto the silicon field emitter array, which was fabricated by photolithography and wet etching technique. The electron emission characteristics such as current-voltage characteristics and current fluctuation were measured in ultra high vacuum. The results showed that the field emitter array with mononitride showed lower effective work function and lower current fluctuation. The present results indicated that stoichiometric niobium nitride is preferred composition for field emission cathodes of vacuum microelectronics.
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