Abstract
Silicon oxide film was deposited on a Si substrate by microwave (2.45GHz) plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) using hexamethyldisiloxane (HMDSO) as the silicon source, oxygen, and argon.The influence of the deposition temperature on the quality of the deposited film and on its deposition rate was investigated by means of FT-IR, XPS, and ellipsometry.In FT-IR measurement of the film, absorption bands from SiMex and/or Si-OH were observed as impurities in the low deposition temperature range (60-170°C), but these absorption bands disappeared at higher substrate temperatures (<170°C). Post plasma treatment of the deposited film using argon-oxygen plasma was also performed in an attempt to decrease impurities in the film, and as a result the SiMex band disappeared completely.In conclusion, MOCVD enhansed by microwave argon-oxygen plasma treatment proved to be in low temperature deposition of silicon oxide film from HMDSO.
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