基板温度制御蒸着法によるＩｎＳｂ蒸着膜の製作

Abstract

It has been studied that evaporated InSb thin films obtained by controlling the substrate temperature have high electron mobility. The method of controlling the substrate temperature is explained as follows : the source material of InSb is started to be fed on the source heater at the time when the substrate temperature starts to increase and is evaporated during about 30-40 seconds while the substrate temperature increases gradually. After the preprogrammed period of temperature increases, the substrate temperature becomes to decrease, but in this period the source material is not fed. The above process is repeated several times until the InSb film grows up 1.0-1.2 μm on the substrate. The InSb film thus prepared has an electron mobility of 30, 000 cm2/V·sec on the cleaved mica sheet and 20, 000 cm2/V·sec on the glass substrate measured at room temperature.