Abstract
Chemical composition of InP substrate surface heattreated under As molecular beam exposure in an ultrahigh vacuum chamber was studied with ESCA, and surface reconstruction of the substrate was examined by in-situ electron diffraction. The InP substrate heated under the exposure of As molecular beam has mirror surface up to 590°C while the surface of InP heated above 400°C in vacuum is roughened. The ESCA study shows that thin InAs layer (thickness<20A) is formed on the surface of InP heated above 500°C under the exposure of As. The electron diffraction study indicates that the InP is cleaned at about 500°C in As pressures of 10-7-10-5 Torr. The InP surface is prevented from thermally decomposing by the coverage of the InAs layer, which may be formed through the following process :2InPO4+As4→2InAs+P2O5↑+As2O3↑.
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