Abstract
We found that the relaxation rate of strained InAs during growth interruption in the molecular beam epitaxy (MBE) chamber depends strongly on InAs layer thickness and As/sub 4/ background pressure. By reducing the As/sub 4/ background pressure, we successfully prevented lattice relaxation of a 6 nm InAs layer, which is 1.5 times thicker than previously reported critical thickness on an InP substrate.
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