パルスレーザー堆積法により作製した凹凸構造を有するＺｎＯ系透明導電膜

Abstract

Thin films of ZnO : Ga (GZO) have been deposited on glass substrates by a pulsed laser deposition technique using SHG of Nd : YAG laser (λ = 532 nm). The size of droplets was lessened by a reduction of the thermal ablation effect in the evaporation processes. Therefore, electrical and optical properties were improved : (1) when prepared at a laser output of 0.2 W, the lowest resistivity of 2.77 × 10-4 Ω·cm and an optical transmittance of more than 95% in the visible region of the spectrum were obtained for 100-150 nm thick GZO (4 wt%) films deposited at substrate temperature of 300°C and on oxygen flow rate of 2 sccm, (2) when prepared at a laser output of 1 W, the lowest resistivity of 6.90 × 10-4 Ω·cm and an optical transmittance of more than 85% and a haze ratio of 33% (λ =550 nm) were obtained at substrate temperature of 200°C and on oxygen flow rate of 2 sccm. Thus, the texture structures with the confinement effect of incident light were observed for 400-500 nm thick GZO (4 wt%) films because the concavo-convex surfaces due to droplets generated from start of deposition.