Large Transmittance Changes Induced in Ga-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition

Abstract

Thin films of ZnO:Ga (GZO) have been deposited on glass substrates at room temperature by a pulsed laser deposition technique using a Nd:YAG laser (λ=1064 nm). The 100-nm-thick GZO films grown in vacuum were dark brown and showed optical transmittance of less than 20% in the 300–3200 nm wavelength region. On the other hand, it was found that GZO films grown in vacuum and annealed at 400–420°C for 3–5 min showed an average transmittance of above 80% in the 400–3200 nm wavelength region. GZO films with large transmittance changes in the 400–600 nm wavelength region can be applied to high-density optical recording films.