Abstract
The structural and magnetic properties of Co2MnSi thin film grown by the ion beam sputtering method were investigated. Films grown on glass substrate at temperatures from 300°C to 600°C were polycrystalline, as were films grown on Si(100) and MgO(100) substrates at 600°C. The crystalline quality of the film improved with increasing substrate temperature. Film grown at 600°C showed the largest magnetization near the bulk value. On the other hand, film with the preferred orientation to the (001) plane was obtained by growing a Ta buffer layer before the growth of Co2MnSi film on any substrates. The saturation magnetization increased with the increase of substrate temperature. This fact is considered to be due to the increase of the long-range order parameter.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
