超硬質皮膜の作製について

Abstract

Listen

Translate article

Hard films composed of e. g. carbides, borides, nitrides and oxides exibit excellent resistance to wear, heat, oxidation and corrosion. This article describes the preparation of hard films by physical vapor deposition (PVD), chemical vapor deposition (CVD) and dynamic mixing, and presents the current status of research and development on diamond and c-BN film formation.In activated reactive evaporation, ion plating and sputtering, in which hard films can be prepared at a high deposition rate, the particles impinging on the substrate contain a considerable amount of ions and highly energized neutral particles. Accordingly, the bias potential applied to the substrate influences the structure and properties of the deposited hard film.CVD techniques for hard film preparation comprise both thermal and plasma. The main disadvantage of thermal CVD is the limitation on substrate materials imposed by the high deposition temperatures. Recently, plasma CVD has enabled TiC, TiN, Si3N4, Al2O3 and other hard films to be deposited at temperatures considerably lower than those used in thermal CVD.Dynamic mixing is a method for forming hard films that combines ion implantation and vacuum deposition. TiN films prepared on Al alloy by nitrogen ion implantation and Ti vacuum deposition were characterized by a low friction coefficient and excellent wear resistance.In terms of diamond film formation, R and D work on increasing deposition rates and expanding of the growth reagion is progressing, and experiments to develop applications are being carried out. High deposition rates have been achieved in electron assisted CVD, rf thermal plasma CVD and thermal filament CVD using organic compounds.Finally, c-BN film deposition has been investigated using various PVD and CVD techniques. Activated reactive evaporation with a nitrogen gas activation nozzle is an effective process for preparing c-BN films.