Abstract
Single crystals of p-type PbTe were prepared by Bridgman method, where either Ag2Te or PbI2 was doped as the source material of silver and iodine. The carrier concentration and Hall mobility were measured from 77 to 300K. The hole concentration was successfully controlled in the range from 2.0×1018 to 9.0×1018cm-3 and from 3.5×1017 to 4.5×1019cm-3 by doping 100 to 1000molppm Ag2Te and 100 to 650molpm PbI2 respectively. The Hall mobility at carrier concentration p>1018cm-3 indicated that the dominant scattering mechanism is phonon scattering at 77-300K. The temperature dependence of the hole mobility at p<1018cm-3 showed an irregular behavior, which was explained on the basis in the overlapped valence bands with light and heavy holes, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
