Abstract
Cu atoms are diffused into Si single crystal samples containing bulk-type stacking faults (SFs), and whole images of the SFs are observed with a transmission electron microscope.In the case of the samples without Cu diffusion, hexagonal SFs with hexagonal Si oxide precipitates are observed. In the case of the samples with Cu diffusion, SFs having branches and CuSi precipitates on edges or inner parts of the branches are observed. CuSi precipitates grow on the Frank dislocation loop, and interstitial Si atoms are released. such interstitial Si atoms are condensed around the CuSi precipitates, and branches in the 〈110〉-direction grow from the SFs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Japan Institute of Metals and Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
