Abstract
Cu atoms are diffused into Si single-crystal samples containing bulk-type stacking faults (SFs), and whole images of the SFs are observed with a transmission electron microscope. In the samples without Cu diffusion, hexagonal SFs with hexagonal Si oxide precipitates are observed. In the case of the samples with Cu diffusion, SFs having branches and CuSi precipitates on the edges or inside of the branches are observed. CuSi precipitates grow on the Frank dislocation loop, and interstitial Si atoms are released
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