Abstract
Titanium (Ti) thin films were deposited on thermal oxidized silicon wafer by a spattering method. The influences of sputtering conditions on the microstructure of Ti films were investigated. The preferred orientation of Ti films change from (002) plane to (101) plane with an increase in sputtering temperature. The grain size and surface roughness increases with increasing spattering temperature till 653 K. On the other hand, the grain size and surface roughness of Ti film surface increases with increasing the thickness of films. This tendency was promoted at higher spattering temperature.
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