Abstract
High-performance bottom-contact pentacene OTFTs with graphene source/drain electrodes by transferring and patterning CVD-grown graphene films in a room-temperature process has been developed.The AFM images show that the growth of pentacene grains was not affected by the electrode,because patterned graphene electrodes were significantly thinner compared to common metal electrodes.The output and transfer curve,on/off current ratio,threshold voltage and field-effect mobility of the device were obtained by electric mea-surements.The transfer curve showed an off-current level of ≈109 A and an on/off current ratio exceeding 103.The bottom-contact pentacene OTFTs based on graphene source/drain electrodes had a maximum field-effect mobility of up to 2×10-2 cm2 ·V-1 ·s-1.
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