Abstract
To establish quantitative analysis of titanium nitride thin film, several experiments were carried out using X-ray photoelectron spectroscopy (XPS). It was demonstrated that two kinds of relative sensitivity ratio of nitrogen to titanium could be determined using standard materials. The one is the relative sensitivity in the primary meaning and it was determined using secondary standard materials of chemical reagents. The other is the one adoptable for a quantitative analysis accompanying Ar+ ion sputter etching such as depth profiling and it was obtained from measurments on the standard titanium nitride films which were prepared by thermal nitriding and reactive r.f. sputtering. Change in atomic composition of the surface by an Ar+ ion bombardment was investigated. It was found that the ratio of the sputtering yield of nitrogen to that of titanium was constant for the samples having nitrogen composition above 0.5 (atm. %). It is confirmed that the accurate quantitative depth analysis is possible for a sample having composition within that range.
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