Abstract
The advantages of tellurium-nitrogen (Te-N) codoping are investigated in ZnO films grown by metal-organic chemical vapor deposition. Te incorporation gives aid in enhancing the N solubility by lowering its formation energy while N addition helps to stabilize the substituted Te on O sites with the phase-segregated ZnTe crystallites suppressed by forming the N-Zn-Te structures in the N-doped ZnTexO1−x. Carbon related impurities, commonly existing in N-doped ZnO and acting as compensating centers for holes, are fully eliminated by the Te-N codoping. The codoping technique also lowers the energy level of the NO acceptors and leads to realizing N-doped ZnTexO1−x films with holes as major carriers.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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