Abstract
Improving the light absorption capacity is essential in some systems that require a high photoelectric conversion efficiency. In this study, a silicon metasurface with mushroom structures is efficiently designed and fabricated based on metal thermal annealing and inductively coupled plasma processes. This metasurface exhibits nearly perfect broadband superabsorption properties across wavelengths in the UV to NIR range. Additionally, the effects of the diameter and height of the mushroom structure on the absorption properties of the silicon metasurface are analyzed by using the finite difference time domain method. Moreover, by carefully adjusting the film thickness and etching time, it is shown that the proposed mushroom-structured metasurface is applicable to systems requiring high absorptance, such as solar cells and photodetectors.
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