Abstract
We investigated bulk and thin-film samples of the quaternary p-type semiconductor Cu2ZnSnS4 (CZTS) by μSR, in order to characterize the existing muonium signals. We find that the majority of the implanted muons form a diamagnetic state broadened by an interaction with the Cu nuclear moments, which we interpret as Mu+ bound to sulphur. A paramagnetic fraction is also present at low temperatures and the ratio between the two muon charge states, Mu+ and Mu0, varies between 20 and 40% prior to the onset of muon diffusion, which occurs at around 150 K. The fraction of Mu0 is found to be sensitive to the defect content of the sample. The paramagnetic fraction has two different contributions and their origin is discussed and related with the muon role as a probe for charge carriers in the material.
Highlights
Cu2ZnSnS4 (CZTS) is a p-type semiconductor based on earth-abundant elements and with a band gap energy of 1.5 eV, which is near the optimum value for application in solar cells
Our goal in this work is to characterize and compare the muonium states formed in CZTS both in bulk and in film and discuss the information provided by the muon probe in the material
The observation that the formation probability of the muon bound state is sensitive to the defect content of the sample indicates that this quantity is sensitive to interactions occurring during the muonium formation process
Summary
Cu2ZnSnS4 (CZTS) is a p-type semiconductor based on earth-abundant elements and with a band gap energy of 1.5 eV, which is near the optimum value for application in solar cells. In a diamagnetic state, most likely Mu+, bound to anion S or Se. At low temperatures, a small portion of the signal (5 to 10%) is missing.
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