Abstract
Boron implanted (B 5 keV 3×1015 cm−2) Si wafers before and after rapid thermal annealing (RTA) were characterized using multi‐wavelength Raman spectroscopy and photoluminescence (PL) measurement techniques. Strong correlation among Raman, PL spectra and RTA conditions are observed. By selecting appropriate excitation wavelengths, approximate dopant profiles, crystallinity, dopant activation, and location and density of non‐radiative recombination centers (originated by defects and damage) of B implanted wafers were successfully characterized by Raman and PL measurements without making contact. Multi‐wavelength Raman and PL can provide advantages as inline process and material monitoring techniques in addition to conventional characterization techniques.
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