Multi-wavelength Raman and photoluminescence characterization of implanted n+/p junctions under various rapid thermal annealing conditions

Abstract

Arsenic (As+) implanted p-type wafers for n+ junction were prepared and annealed in a resistively heated, single wafer rapid thermal furnace in N2. The wafers were non-destructively characterized by multi-wavelength Raman spectroscopy and multi-wavelength photoluminescence (PL) spectroscopy before and after rapid thermal annealing (RTA). Sheet resistance and dopant profiles of n+/p junctions were measured using a four point probe and secondary ion mass spectroscopy (SIMS). Strong correlation among Raman, PL spectra, sheet resistance, dopant profile and RTA conditions were observed. Approximate dopant profiles, crystal quality, junction integrity, dopant activation/deactivation rates, and approximate profiles (location and density) of non-radiative recombination centers of As+ implanted wafers were successfully characterized by multi-wavelength Raman and PL measurements without making contact. Multi-wavelength Raman and PL can provide advantages as in-line, non-contact/non-destructive process and material monitoring techniques, and complement conventional invasive characterization techniques.