Abstract
In this paper, we report simultaneous detection of fluorescence and turbidity using a multiwavelength photosensor. The multiwavelength photosensor is fabricated in a 5 µm 1-poly 1-metal p-well complementary metal oxide semiconductor (CMOS) technology. First, to confirm the basic characteristics of the multiwavelength photosensor, the linearity of irradiated intensity and photocurrent, fluorescence detection capability, and turbidity detection capability were separately observed. Then, in the fluorescence detection measurement using a fluorescent dye, a detection limit of DNA concentration of 49.8 nM was determined. Then, the turbidity detection performance was compared with that of a Si photodiode. Finally, the sensor was used for real-time monitoring of DNA amplification using the loop-mediated isothermal amplification (LAMP) method. Owing to its multiwavelength detection, simultaneous changes in fluorescence and turbidity were successfully observed using a single sensor.
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