Multiwavelength GaN‐Based Surface‐Emitting Lasers and Their Design Principles

Abstract

AbstractDual‐wavelength lasing operations are demonstrated in GaN‐based vertical‐cavity surface‐emitting lasers (VCSELs) comprising ingeniously designed asymmetric InGaN quantum wells (AS‐QWs). The dual laser modes show exact positive‐correlated polarization dependences with a high degree of polarization of up to 98%. By simply tuning the pump energy, the components and intensity of the laser outputs can be continuously changed, making wavelength selection and switching available for the GaN‐based VCSELs. Detailed theoretical analysis and experimental measurements show that the intensity of optical gain and the coupling between the active layer and optical field, namely the electron–photon interaction, as well as carrier tunneling and photon reabsorption play a crucial role in the multiwavelength lasing processes. Moreover, the design principles of the proposed AS‐QWs and multistacked size‐varied quantum dot (MS‐QD) active regions are elaborated to provide guidelines for controllable multiwavelength emissions in GaN‐based surface‐emitting lasers. These results not only provide better understanding of lasing in nitride‐based microcavity systems but also shed insight into the more fundamental issues of electron–photon coupling in such systems. Importantly, such controllable multiwavelength laser operations may extend nitride‐based VCSELs to previously inaccessible areas, for example, flip‐flop, ultrafast switches, and other functional devices such as Raman lasers and sensors.