Abstract
A process of the multivalent substitution of Mn atoms for cations in Ga1−xMnxAs (a base material) is proposed. According to this approach, the two-cation ternary compound with a chalcopyrite structure is used as a component forming a solid solution with GaAs. Based on the successful prediction and growth of high-temperature chalcopyrite ferromagnets, it is expected that the content of Mn in Ga1−xMnxAs can be increased. Quasi-binary (GaAs)1−x(ZnGeAs2)x:Mn and (GaAs1−x(CdSiAs2)x:Mn solid solutions are considered as candidate materials possessing higher Curie temperatures as compared to that of Ga1−xMnxAs.
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