Abstract
TFETs have become an alternative to conventional MOSFETs in the last years due to the possibility of achieving low subthreshold swing (SS) that allows for low off current and operation at low V DD . In this work a non-local band-to-band tunneling model has been successfully implemented into a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator and applied to ultra-scaled silicon-based n-type TFETs. Different approaches for the choice of the tunneling path have been compared and relevant differences are observed in both the current levels and the spatial distribution of the generated carriers.
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