Abstract
The effect of structural asymmetry on multisubband electron mobility is studied by considering a barrier delta doped GaAs/AlxGa1−x As quantum well structure. The subband wave functions and energy levels are obtained by adopting selfconsistent solution of the coupled Schrodinger and Poisson’s equations. We consider scatterings due to ionized impurities, interface roughness and alloy disorder. The screening of the scattering potentials is obtained by adopting static dielectric response function formalism. We show that the interplay of different scattering mechanisms on low temperature electron mobility yields interesting results through intersubband interaction. Further, we show that asymmetry in structure parameters, such as, doping concentrations and spacer widths, influence in enhancing the mobility considerably.
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