Abstract
The effect of external electric field F on multisubband electron mobility μ in an In0.53Ga0.47As/In0.52Al48As double quantum well structure is analyzed. We consider scatterings due to ionized impurities, interface roughness and alloy disorder to analyze μ. The variation of scattering mechanisms as a function of F for different structure parameters shows interesting results through intersubband interactions. For small well widths, the mobility is governed by interface roughness scattering. When two subbands are occupied, the effect of impurity scattering gets enhanced through intersubband interactions. Our results of enhancement in mobility as a function of F, can be utilized for low temperature devices.
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