Abstract
We have designed, simulated, and experimentally demonstrated four-colour mid-infrared (mid-IR) Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semi-insulating GaAs substrate. In order to finely control the peak wavelength of the emitted mid-IR light, quantum well (QW) structures based on AlInSb/InSb/AlInSb are employed. The completed device structure consists of three p-QW-n diodes with different well widths stacked on top of one bulk AlInSb p-i-n diode. The epitaxial layers comprising the device are designed in such a way that one contact layer is shared between two LEDs. The design of the heterostructure realising the multispectral LEDs was aided by numerical modelling, and good agreement is observed between the simulated and experimental results. Electro-Luminescence measurements, carried out at room temperature, confirm that the emission of each LED peaks at a different wavelength. Peak wavelengths of 3.40 μm, 3.50 μm, 3.95 μm, and 4.18 μm are observed in the bulk, 2 nm, 4 nm, and 6 nm quantum well LEDs, respectively. Under zero bias, Fourier Transform Infrared photo-response measurements indicate that these fabricated diodes can also be operated as mid-IR photodetectors with an extended cut-off wavelength up to 4.6 μm.
Highlights
We have designed, simulated, and experimentally demonstrated four-colour mid-infrared Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semiinsulating GaAs substrate
In order to finely control the peak wavelength of the emitted mid-IR light, quantum well (QW) structures based on AlInSb/InSb/AlInSb are employed
Jung has demonstrated twowavelength tunable mid-IR LEDs grown on a GaSb substrate,4 which are based on bottom (GaSb substrate) emission
Summary
We have designed, simulated, and experimentally demonstrated four-colour mid-infrared (mid-IR) Light Emitting Diodes (LEDs) integrated monolithically into a vertical structure on a semiinsulating GaAs substrate. Peak wavelengths of 3.40 lm, 3.50 lm, 3.95 lm, and 4.18 lm are observed in the bulk, 2 nm, 4 nm, and 6 nm quantum well LEDs, respectively.
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