Multiscale Analysis on Gas Phase and Surface Chemistry of SiC-CVD Process from CH3SiCl3/H2

Abstract

A multi-scale analysis, which is a macro and a micro-scale analysis, was performed on the chemical vapor deposition (CVD) for the synthesis of silicon carbide (SiC) from mono-methyl tri-chlorosilane (MTS:CH3SiCl3) and H2 to elucidate the major reaction mechanism and kinetics. The multi-scale analysis provides two well-defined reaction fields, corresponding to centimeter and sub-micron characteristic length scales, respectively. From the macro-scale analysis, a detail of the kinetics on the SiC deposition was successfully investigated with different residence time. The microcavity method as a micro-scale analysis was utilized to study a chemical reaction path, and to estimate the sticking probability of growth species on the surface reaction. In order to guess a molecular of growth species on the surface reaction, a quadrupole mass spectrometry (QMS) and an elementary reaction simulation were used. These combinations of analyses revealed an overall picture of the reaction scheme of SiC-CVD.