Abstract
ABSTRACTThe low pressure chemical vapor deposition (LPCVD) of silicon carbide from (CH3)HSiCH2SiCH2 (CH3)CH2 SiH2 (CH 3) on Si(100) has been investigated between 700 and 1100°C at ca. 1.0 torr total pressure using a flow of argon as a carrier gas in a cold-wall LPCVD system. The gaseous byproducts were determined using quadrupole mass spectrometry (QMS) and gas chromatography - Fourier transform IR (FTIR) spectroscopy. The coating surface morphology varied from smooth to a columnar structure with increasing substrate temperature. Film composition and crystallinity were monitored as a function of deposition temperature using Auger electron spectroscopy (AES) and powder XRD.
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